P-type OFET with fluorinated channels
AssigneeLucent Technologies Inc.
InventorsZhenan Bao, Evert-Jan Borkent
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Abstract
The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surface. The semiconductor layer comprises organic semiconductor molecules. Each of the organic semiconductor molecules includes a core having conjugated pi bonds, a fluorinated alkyl group, and an alkyl spacer group having a chain of two or more carbon atoms. One end of the chain is bonded to the fluorinated alkyl group and another end of the chain is bonded to the core. Substituents coupled to the carbon atoms have an electronegativity of less than about 4.
Claims8
1-13. (canceled)
A method of manufacturing an organic field effect transistor (OFET), comprising:
- providing a substrate;
- forming a gate over said substrate;
- and
- forming a semiconductor layer over said substrate, wherein said semiconductor layer comprises organic semiconductor molecules,
- wherein each of said organic semiconductor molecules includes a core having conjugated pi bonds, a fluorinated alkyl group, and an alkyl spacer group having a chain of two or more carbon atoms,
- wherein one end of said chain is bonded to said fluorinated alkyl group and another end of said chain is bonded to said core and substituents coupled to said carbon atoms have an electronegativity of less than about 4;
- and
- wherein said OFET is configured to function as a p-type OFET.
Dependencies are inferred from the claim text.