N,N'-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
AssigneeEastman Kodak Company
InventorsDeepak Shukla, Diane Freeman, Shelby Nelson
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Abstract
A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
Claims30
An article comprising, in a thin film transistor, a thin film of organic semiconductor material that comprises an N,N′-di(arylalkyl)-substituted perylene-based tetracarboxylic diimide compound having a substituted or unsubstituted carbocyclic aromatic ring system attached to each imide nitrogen atom through a divalent hydrocarbon group, wherein substituents, if any, on each carbocyclic aromatic ring system comprise at least one electron donating organic substituent.
A process for fabricating a thin film semiconductor device, comprising, not necessarily in the following order, the steps of:
- (a) depositing, onto a substrate, a thin film of n-channel organic semiconductor material that comprises an N,N′-di(arylalkyl)-substituted perylene-based tetracarboxylic diimide compound having a substituted or unsubstituted carbocyclic aromatic ring system attached to each imide nitrogen atom through a divalent hydrocarbon group, wherein substituents, if any, on each carbocyclic aromatic ring system comprise at least one electron donating organic group, such that the organic semiconductor material exhibits a field effect electron mobility that is greater than 0.01 cm2/Vs;
- (b) forming a spaced apart source electrode and drain electrode, wherein the source electrode and the drain electrode are separated by, and electrically connected with, the n-channel semiconductor film;
- and.
- (c) forming a gate electrode spaced apart from the organic semiconductor material.
Dependencies are inferred from the claim text.