US 2006/0134820 A1 · Process for forming microstructures

Abstract

The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first layer of photoresist dissolvable in a first pattern. The dissolvable photoresist is removed and a first layer of primary metal is electroplated in the area where the first layer of photoresist was removed. The remainder of the photoresist is then removed and a second layer of photoresist is then applied over the plating base and first layer of primary metal. The second layer of photoresist is then exposed to a second pattern of radiation to render the photoresist dissolvable and the dissolvable photoresist is removed. The second pattern is an area that surrounds the primary structure, but it does not entail the entire substrate. Rather it is an island surrounding the primary metal. The exposed surface of the secondary metal is then machined down to a desired height of the primary metal. The secondary metal is then etched away.

Claims31

Dependent claims

A process for forming a micromechanical structure comprising:

providing a plating base on a surface of a substrate;
forming a first photoresist layer on the plating base;
exposing the first photoresist layer to a first pattern of radiation to render the first photoresist layer dissolvable in a first pattern;
removing the dissolvable photoresist of the first photoresist layer;
electroplating a layer of a primary metal onto the plating base in the area where the first photoresist layer has been removed;
removing the remainder of the first photoresist layer;
forming a second photoresist layer over the plating base and the layer of primary metal;
exposing the second photoresist layer to a second pattern of radiation to render the second photoresist layer dissolvable in a second pattern, the second pattern being formed such that an area surrounding the primary metal is dissolved, wherein the area is less than the entirety of the substrate;
removing the dissolvable photoresist of the second photoresist layer;
electroplating an amount of a secondary metal in the area where the second photoresist layer has been removed;
removing the remainder of the photoresist of the second photoresist layer;
electroplating an amount of a third metal over substantially the entire length of the substrate;
machining the third metal, the secondary metal, and the primary metal down to a substantially flat surface corresponding to a desired height of the layer of primary metal;
and
etching away the remainder of the secondary and third metals.

12 more elements

A process of forming a micromechanical electrical structure comprising:

depositing a first seed layer on a substrate;
depositing a first photoresist layer on the first seed layer;
exposing the first photoresist layer to a first pattern of radiation to render the first photoresist layer dissolvable in a first pattern;
removing the dissolvable photoresist of the first photoresist layer;
removing a portion of the first seed layer in the area where the first photoresist layer has been removed;
removing the remainder of the first photoresist layer;
depositing a second seed layer on the substrate and first seed layer;
depositing a second photoresist layer on the exposed surfaces of the first seed layer and the exposed surface of the second seed layer;
exposing the second photoresist layer to a second pattern of radiation to render the second photoresist layer dissolvable in a second pattern;
removing the dissolvable photoresist of the second photoresist layer;
etching away a portion of the second seed layer in the area where the second photoresist layer has been dissolved;
electroplating a layer of a primary metal across the plating base in the area where the second photoresist layer has been removed;
removing the remainder of the second photoresist layer;
applying a third photoresist layer across the second seed layer and the layer of primary metal;
exposing the third photoresist layer to a third pattern of radiation to render the third photoresist layer dissolvable in a third pattern, the third pattern being formed such that an area surrounding the primary metal is dissolved, wherein the area is less than the entirety of the substrate;
electroplating an amount of a secondary metal in the area where the third photoresist layer has been removed;
removing the remainder of the photoresist of the second photoresist layer;
electroplating an amount of a third metal over substantially the entire length of the substrate;
machining the third metal, the secondary metal, and the primary metal down to a substantially flat surface corresponding to a desired height of the layer of primary metal;
and
etching away the remainder of the secondary and third metals.
etching away the second seed layer.

19 more elements

Dependencies are inferred from the claim text.

Process for forming microstructures

Life of this patent

Process for forming microstructures

Life of this patent

Abstract

Claims31