Semiconductor laser device of III-V group compound and fabrication method therefor

Abstract

A semiconductor laser device of a III-V group compound includes a substrate including a main surface having an inclination angle of less than 20° toward a [011] direction from a (100) plane and an inclined facet further inclined toward the [011] direction from the main surface, a light emitting stacked-layered portion including at least an active layer and a clad layer over the substrate, and a current-constricting layer including a IV group impurity. The current-constricting layer has a region of an n type conductivity above the main surface of the substrate, and a region of a p type conductivity above the inclined facet of the substrate.

Dependencies are inferred from the claim text.