Method of manufacturing solid image pickup apparatus

A method of manufacturing a solid image pickup apparatus including a plurality of light-receiving areas formed on a semiconductor substrate, moving signal charge obtained by photoelectrically converting light incident upon the light-receiving areas in a transfer area within said semiconductor substrate with a sequential voltage applied to a first electrode and a second electrode formed in the vicinity of the light-receiving areas and finally outputting an electric signal having a waveform varying in accordance with intensity of the incident light, said method comprising:

• forming an insulating film on said semiconductor substrate;
• forming the first electrode on said semiconductor substrate via the insulating film;
• forming the second electrode on said semiconductor substrate with the second electrode electrically insulated from the first electrode;
• and
• removing part of the portion of the second electrode overlapping with the first electrode, wherein
• when part of the portion of the second electrode overlapping with the first electrode is removed, part of the portion of the second electrode overlapping with the first electrode is left open after the second electrode is formed and only the opening area is etched.

A method of manufacturing a solid image pickup apparatus including a plurality of light-receiving areas formed on a semiconductor substrate, moving signal charge obtained by photoelectrically converting light incident upon the light-receiving areas in a transfer area within said semiconductor substrate with a sequential voltage applied to a first electrode and a second electrode formed in the vicinity of the light-receiving areas and finally outputting an electric signal having a waveform varying in accordance with intensity of the incident light, said method comprising:

• forming an insulating film on said semiconductor substrate;
• forming the first electrode on said semiconductor substrate via the insulating film;
• forming the second electrode on said semiconductor substrate with the second electrode electrically insulated from the first electrode;
• and
• removing part of the portion of the second electrode overlapping with the first electrode, wherein
• when the second electrode is formed on said semiconductor substrate with the second electrode electrically insulated from the first electrode, an inter-layer insulating film is formed between the first electrode and the second electrode.

A method of manufacturing a solid image pickup apparatus including a plurality of light-receiving areas formed on a semiconductor substrate, moving signal charge obtained by photoelectrically converting light incident upon the light-receiving areas in a transfer area within said semiconductor substrate with a sequential voltage applied to a first electrode and a second electrode formed in the vicinity of the light-receiving areas and finally outputting an electric signal having a waveform varying in accordance with intensity of the incident light, said method comprising:

• forming an insulating film on said semiconductor substrate;
• forming the first electrode on said semiconductor substrate via the insulating film;
• forming the second electrode on said semiconductor substrate with the second electrode electrically insulated from the first electrode;
• and
• removing all the portion of the second electrode overlapping with the first electrode.

A method of manufacturing a solid image pickup apparatus including a plurality of light-receiving areas formed on a semiconductor substrate, moving signal charge obtained by photoelectrically converting light incident upon the light-receiving areas in a transfer area within said semiconductor substrate with a sequential voltage applied to a first electrode and a second electrode formed in the vicinity of the light-receiving areas and finally outputting an electric signal having a waveform varying in accordance with intensity of the incident light, said method:

• forming an insulating film on said semiconductor substrate;
• forming the first electrode on said semiconductor substrate via the insulating film;
• forming a film of said second electrode over the entire surface of said semiconductor substrate;
• and
• removing part of the film of the second electrode and forming the second electrode on said semiconductor substrate with the second electrode electrically insulated from the first electrode.

A method of manufacturing a solid image pickup apparatus including a plurality of light-receiving areas formed on a semiconductor substrate, moving signal charge obtained by photoelectrically converting light incident upon the light-receiving areas in a transfer area within said semiconductor substrate with a sequential voltage applied to a first electrode and a second electrode formed in the vicinity of the light-receiving areas and finally outputting an electric signal having a waveform varying in accordance with intensity of the incident light, said method comprising:

• forming an embedded gate electrode after a diffused layer is selectively formed on the semiconductor substrate;
• forming an insulating film on said semiconductor substrate;
• forming a contact hole in the gate electrode and an oxide insulating film;
• forming the first electrode on said semiconductor substrate via the insulating film and electrically connecting the first gate electrode and the embedded gate electrode via the contact hole;
• forming the second electrode on said semiconductor substrate with the second electrode electrically insulated from the first electrode;
• and
• removing at least part of the second electrode overlapping with the first electrode.