Method of exposure for lithography process and mask therefor
AssigneeMacronix International Co., Ltd.
InventorChin Yang
Life of this patent
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Abstract
An improved photolithography method and mask are disclosed. The method exposes a substrate coated with a photosensitive material using a first mask. The photosensitive material after said first exposure includes one or more under-exposed or incompletely exposed portions or one or more portions prone to peeling. The under-exposed or incompletely exposed portions or portions prone to peeling are subjected to a second exposure using a second mask. The second mask includes a pattern for projecting an image on the substrate coated with the photosensitive material. The image corresponds to areas of the photosensitive material that have been under-exposed or incompletely exposed or areas prone to peeling.
Claims26
A semiconductor photolithography method comprising:
- providing a substrate coated with a photosensitive material having one or more under-exposed or incompletely exposed portions;
- exposing the one or more under-exposed or incompletely exposed portions such that those portions are further exposed.
A semiconductor photolithography method comprising:
- exposing photosensitive material on a substrate with a first dose of light radiation using a first mask, the photosensitive material exposed with the first mask having one or more under-exposed or incompletely exposed portions;
- and
- exposing the photosensitive material on the substrate with a second dose of light radiation using a second mask such that the under-exposed or incompletely exposed portions are further exposed.
A semiconductor photolithography method comprising:
- exposing photosensitive material on a substrate with a first dose of light radiation using a first mask, the photosensitive material not exposed with the first mask having one or more portions prone to peeling;
- and
- exposing the one or more photosensitive material not exposed with the first mask with a second dose of light radiation using a second mask such that the portions prone to peeling are exposed.
A method for fabricating semiconductor devices comprising:
- exposing a substrate coated with a photosensitive material using a first mask, the photosensitive material after said first exposure including one or more under-exposed or incompletely exposed portions or one or more portions prone to peeling;
- and
- exposing the under-exposed or incompletely exposed portions or portions prone to peeling using a second mask.
A photolithography mask comprising:
- a pattern for projecting an image on a substrate coated with photosensitive material, the image corresponding to areas of the photosensitive material that have been under-exposed or incompletely exposed or areas prone to peeling.
Dependencies are inferred from the claim text.