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US 2006/0133442 A1Published application
Nitride semiconductor light-emitting device and method for fabrication thereof
AssigneeSharp Kabushiki Kaisha
InventorsMasahumi Kondou, Takeshi Kamikawa, Yoshinobu Kawaguchi
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Abstract
An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
Claims15
A nitride semiconductor light-emitting device, comprising:
- a nitride-based III-V group compound semiconductor layer;
- an optical resonator formed in the nitride-based III-V group compound semiconductor layer;
- and
- a facet coat formed at a facet of the optical resonator;
- wherein an adhesion layer of a hexagonal crystal is formed between the facet of the optical resonator and the facet coat.
2 more elements
A method for fabricating a nitride semiconductor light-emitting device, the method comprising the steps of:
- forming a nitride-based III-V group compound semiconductor layer;
- forming an optical resonator of the nitride-based III-V group compound semiconductor layer by cleaving the nitride-based III-V group compound semiconductor layer;
- cleaning a facet of the optical resonator formed by cleavage by using an inert gas;
- forming, on the cleaned facet of the optical resonator, a layer of aluminum nitride;
- and
- forming a facet coat on a surface of the layer of aluminum nitride.
3 more elements
Dependencies are inferred from the claim text.