Optical semiconductor device
OwnerKi Kim, Chul Lee +5inventors
InventorsKi Kim, Chul Lee, Dong Lee, Jung Song, Eun Sim, Sung Kim, Yong Baek
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Abstract
Provided is an optical semiconductor device including: an active layer having at least one quantum well layer and at least one barrier layer; a clad layer formed adjacent to the active layer; and a tunneling barrier layer formed between the active layer and the clad layer to be connected to the quantum well layer and formed of a material having a band-gap energy larger than the barrier layer, whereby it is possible to improve the drive characteristics at a high temperature and a high drive current by increasing a confinement effect of carriers such as electrons and holes in the active layer.
Claims11
An optical semiconductor device comprising:
- an active layer having at least one quantum well layer and at least one barrier layer;
- a clad layer formed adjacent to the active layer;
- and
- a tunneling barrier layer formed between the active layer and the clad layer to be connected to the quantum well layer and formed of a material having a band-gap energy larger than the barrier layer.
An optical semiconductor device comprising:
- an active layer having at least one quantum well layer and at least one barrier layer;
- an SCH layer and a clad layer formed adjacent to the active layer;
- and
- a tunneling barrier layer formed between the active layer and the SCH layer to be connected to the quantum well layer and formed of a material having a band-gap energy larger than the SCH layer.
Dependencies are inferred from the claim text.