Phase-change RAM containing AIN thermal dissipation layer and TiN electrode

A phase-change memory, comprising:

• a metal alloy stack formed of a lower electrode made of titanium nitride and a thermal dissipation layer made of aluminum nitride over the lower electrode;
• and
• a phase-change material formed at opposing side end portions of the metal alloy stack,
• whereby the metal alloy stack allows appropriate heat energy to be generated in the phase-change material and allows the generated heat to quickly dissipate thereafter, to achieve appropriate phase changes between a crystalline state and an amorphous state of the phase-change material for writing and reading of data in memory.

A phase-change memory, comprising:

• a titanium nitride lower electrode;
• an aluminum nitride thermal dissipation layer having a first portion covering the titanium nitride layer and a second portion thereabove;
• and
• a phase-change material formed at side edges of the titanium nitride lower electrode and the first portion of the aluminum nitride thermal dissipation layer, whereby the titanium nitride and the aluminum nitride allow the phase-change material to heat up and cool down in a rapid manner when reading and writing data in memory.