Nonvolatile semiconductor memory device and voltage generating circuit for the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDoo-Sub Lee, Seung-Keun Lee
Life of this patent
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Abstract
A nonvolatile semiconductor memory device includes a memory cell array of a plurality of memory cells; and a voltage generating circuit for generating a programming voltage to be applied to the memory cells. The voltage generating circuit includes a first voltage generating unit for generating a negative voltage through a first charge pump; and a second voltage generating unit for generating a positive voltage through a second charge pump. During an accelerated programming operation, the first voltage generating unit increases a pumping efficiency of the first charge pump using an external power supply voltage, and the second voltage generating unit directly outputs the external power supply voltage.
Claims31
A nonvolatile semiconductor memory device comprising:
- a memory cell array of a plurality of memory cells;
- and
- a voltage generating circuit for generating a programming voltage to be applied to the memory cells,
- wherein the voltage generating circuit includes:
- a first voltage generating unit for generating a negative voltage through a first charge pump;
- and
- a second voltage generating unit for generating a positive voltage through a second charge pump, and
- wherein during an accelerated programming operation, the first voltage generating unit increases a pumping efficiency of the first charge pump using an external voltage, and the second voltage generating unit directly outputs the external voltage.
A voltage generating circuit comprising:
- a first voltage generating unit for generating a negative voltage through a first charge pump;
- and
- a second voltage generating unit for generating a positive voltage through a second charge pump,
- wherein the first voltage generating unit increases a pumping efficiency of the first charge pump using an externally-supplied voltage, and the second voltage generating unit directly outputs the externally-supplied voltage during an accelerated programming operation.
A voltage generating circuit comprising:
- a charge pump for performing a charge pumping operation in response to a clock signal;
- a regulator for setting a clock voltage;
- a pump driver for controlling a phase and magnitude of the clock signal in response to the clock voltage;
- and
- a level detector for detecting an output level of the charge pump to control an applying of the clock signal to the pump driver,
- wherein, during an accelerated programming operation, the regulator raises the clock voltage to a set level using an external power supply voltage, and the pump driver controls a magnitude of the clock signal to correspond to the clock voltage.
Dependencies are inferred from the claim text.