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US 2006/0133145 A1Published application
Flash memory devices and methods of programming the same by overlapping programming operations for multiple mats
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-Sung Park, Dae-Seok Byeon
Life of this patent
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Abstract
A flash memory device is programmed by loading first data into a page buffer of a first mat. Second data is loaded into a page buffer of a second mat while programming the first data in a first memory block of the first mat.
Claims20
A method of programming a flash memory device comprising:
- loading first data into a page buffer of a first mat;
- and
- loading second data into a page buffer of a second mat while programming the first data in a first memory block of the first mat.
A method of programming a flash memory device comprising:
- loading first data into a page buffer of a first mat;
- loading second data into a page buffer of a second mat;
- and
- programming at least some of the first and second data into first and second memory blocks of the first and second mats, respectively, concurrently.
1 more element
A flash memory device comprising:
- a first mat that comprises a first memory block and a first page buffer that is configured to receive first data;
- and
- a second mat that comprises a second page buffer that is configured to receive second data while the first data is programmed in the first memory block.
A flash memory device comprising:
- a first mat that comprises a first memory block and a first page buffer and is configured to receive first data;
- and
- a second mat that comprises a second memory block and a second page buffer and is configured to receive second data;
- wherein the first and second memory blocks are configured to be programmed with at least some of the first and second data, respectively, concurrently.
1 more element
Dependencies are inferred from the claim text.