Nonvolatile semiconductor memory device and a method of word lines thereof

A method for driving word lines of a nonvolatile semiconductor memory device, said nonvolatile semiconductor memory device comprising:

• a memory cell array having a plurality of blocks each including a plurality of electrically reprogrammable nonvolatile memory cells arranged in matrix;
• a first circuit for selecting one from said plurality of blocks, said first circuit having a plurality of transistors connected to word lines connected to some of said nonvolatile memory cells;
• and
• a second circuit for generating a first voltage V1, a second voltage V2 and a third voltage V3 (V3<V2<V1), said first voltage V1, said second voltage V2 and said third voltage V3 being applied to sources or drains corresponding said plurality of transistors, and
• said method comprising of:
• applying said first voltage V1 to a source or drain of one of said transistors connected to a selected word line at a timing of programming data;
• applying the second voltage V2 to sources or drains of some of said transistors connected to non-selected word lines at the timing of programming data;
• and
• applying the third voltage V3 to a source or a drain of one of said transistors connected to at least one of said non-selected word lines at the timing of programming data, said third voltage V3 being higher than a well or substrate voltage of said plurality of transistors, and said third voltage being the lowest among voltages applied to said sources or drains of said plurality of transistors applied in a period of the first voltage V1 and said second voltage V2 being applied to corresponding said word lines.