Methods for enhancing performance of ferroelectric memory with polarization treatment

A method of modifying switched polarization for ferroelectric memory cells comprising:

• providing the ferroelectric memory cells comprising ferroelectric capacitors, wherein the ferroelectric capacitors comprise ferroelectric material containing inactive domains;
• selecting a duration for applying a DC bias voltage according to duration factors;
• selecting a bias amount for applying the DC bias voltage according to bias factors;
• selecting an elevated temperature for applying the DC bias voltage according to temperature factors;
• and
• activating one or more inactive domains of the ferroelectric capacitors by applying the DC bias voltage across the ferroelectric capacitors according to the selected duration, the selected bias amount, and the selected elevated temperature.

A method of modifying switched polarization for ferroelectric memory cells comprising:

• providing the ferroelectric memory cells comprising ferroelectric capacitors;
• selecting a number of pulses according to a desired switched polarization improvement;
• selecting a magnitude of the pulses according to bias factors;
• and
• applying the pulses according to the selected number and the selected magnitude across the ferroelectric capacitors.