Nonvolatile semiconductor memory device to which information can be written only once

A nonvolatile semiconductor memory device comprising:

• a cell array including a plurality of storage cells arranged in matrix, each of the storage cells having a storage element which is programmed with information by breaking an insulating film thereof by applying a voltage, and a selection switch connected in series to the storage element;
• a row selection control circuit which activates a row selection line connected to a given number of storage cells;
• and
• a write control circuit which controls a voltage of each of data lines bit by bit in accordance with write data, the data lines being connected to the given number of storage cells connected to the row selection line activated by the row selection control circuit, wherein the write control circuit discharges data lines connected to storage cells to which “1” is to be written, one by one, the storage cells being included in the given number of storage cells connected to the row selection line activated by the row selection control circuit.