Semiconductor memory device capable of switching from multiplex method to non-multiplex method
AssigneeRenesas Technology Corp.
InventorsTomoyuki Fujisawa, Takashi Kubo
Life of this patent
Estimating the term…
Loading patent…
AssigneeRenesas Technology Corp.
InventorsTomoyuki Fujisawa, Takashi Kubo
Estimating the term…
There is provided a semiconductor memory device which adopts a multiplex method in which an address signal and a data signal are input into the same terminal, and which is capable of switching from the multiplex method to a non-multiplex method in which an address signal and a data signal are respectively input into separate terminals. The semiconductor memory device is provided with an address pad into which only an address signal is input, independently of an address data multipad into which an address signal and a data signal are input. A switching control signal generated in the multiplex method/non-multiplex method is used to switch the paths of the address signal input into an address buffer. Accordingly, it is possible to input an address signal and a data signal into the address buffer and a data buffer, respectively, in parallel.
A semiconductor memory device according to the present invention, comprising:
Dependencies are inferred from the claim text.