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AssigneeHeadway Technologies, Inc.
InventorsKunliang Zhang, Mao-Min Chen, Chyu-Jiuh Torng, Min Li, Chen-Jung Chien
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A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total HC, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW reject rates during a read operation are achieved.
A hard bias structure for providing a longitudinal bias to a free layer in a magnetoresistive (MR) element having two sides formed perpendicular to an air bearing surface (ABS), said hard bias structure is formed on a substrate and comprises:
A laminated hard bias structure for providing a longitudinal bias to a free layer in a MR element having two sides formed perpendicular to an ABS, said laminated hard bias structure is formed on a substrate and comprises a plurality of stacks formed adjacent to each side of the MR element wherein at least one of the plurality of stacks forms an abutting junction with said free layer on each side of the MR element and wherein each stack is comprised of:
A hard bias structure formed adjacent to a giant magnetoresistive (GMR) sensor element in a magnetic read head, said hard bias structure is formed on a substrate and provides longitudinal biasing to a free layer in the GMR sensor element having a top surface and two sides formed perpendicular to an ABS, comprising:
A laminated hard bias structure formed adjacent to a giant magnetoresistive (GMR) sensor element in a magnetic read head, said hard bias structure provides longitudinal biasing to a free layer in a GMR sensor element having a top surface and two sides formed perpendicular to an ABS, comprising:
Dependencies are inferred from the claim text.