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US 2006/0132986 A1Published application
Magnetoresistance device and method of fabrication using titanium nitride as capping layer
OwnerSoon-Won Hwang, Tae-Wan Kim +3inventors
InventorsSoon-Won Hwang, Tae-Wan Kim, Seok-Jae Chung, Yong-Hwan Yoo, Jee-Won Chung
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Abstract
A magnetoresistance device using TiN as a capping layer and a method of fabricating the same. The fabrication of the magnetoresistance device may be simpler and the magentoresistance device may be more stable and/or more reliable.
Claims20
A magnetoresistance device, comprising:
- a magnetoresistance material layer formed on a lower material layer;
- and
- a TiN capping layer formed on the magnetoresistance material layer.
A method of fabricating a magnetoresistance device comprising:
- forming a magnetoresistance material layer on a lower material layer;
- depositing TiN as a capping layer on the magnetoresistance material layer;
- depositing photoresist on the capping layer and patterning the photoresist to expose a portion of the capping layer;
- and
- etching the exposed portion of the capping layer, and etching the magnetoresistance material layer below the capping layer, to form a plurality of discrete magnetoresistance material layers.
2 more elements
Dependencies are inferred from the claim text.