US 2006/0132984 A1Published application

Magnetic memory device having yoke layer on write interconnection and method of manufacturing the same

AssigneeKabushiki Kaisha Toshiba

InventorsTakeshi Kajiyama, Tomomasa Ueda, Tatsuya Kishi, Hiroaki Yoda, Hisanori Aikawa, Masatoshi Yoshikawa

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Abstract

A magnetic memory device includes a magnetoresistance effect element, and a first write interconnection which is arranged under the magnetoresistance effect element and has a first interconnection layer and a first yoke layer, the first interconnection layer having a portion projecting toward the magnetoresistance effect element, and the first yoke layer including a first, a second, and third regions. And the device includes a second write interconnection which is arranged above the magnetoresistance effect element and has a second interconnection layer and a second yoke layer, the second interconnection layer having a portion projecting toward the magnetoresistance effect element, and the second yoke layer including a fourth, a fifth, and sixth regions.

Claims19

Dependent claims

A magnetic memory device comprising:

a magnetoresistance effect element;
a first write interconnection which is arranged under the magnetoresistance effect element and has a first interconnection layer and a first yoke layer, the first interconnection layer having a portion projecting toward the magnetoresistance effect element, and the first yoke layer including a first region which covers sidewalls of the first interconnection layer, a second region which covers a bottom surface of the first interconnection layer, and third regions which are formed in contact with sidewalls of the projecting portion and magnetically coupled to the first region and second region;
and
a second write interconnection which is arranged above the magnetoresistance effect element and has a second interconnection layer and a second yoke layer, the second interconnection layer having a portion projecting toward the magnetoresistance effect element, and the second yoke layer including a fourth region which covers sidewalls of the second interconnection layer, a fifth region which covers an upper surface of the second interconnection layer, and sixth regions which are formed in contact with sidewalls of the projecting portion and magnetically coupled to the fourth region and fifth region.

1 more element

A method of manufacturing a magnetic memory device, comprising:

forming a trench in a first insulating layer and forming a first yoke layer along an inner wall of the trench;
forming a first conductive layer on the first yoke layer in the trench;
recessing an upper surface of the first conductive layer to partially expose sidewalls of the first yoke layer;
forming a second yoke layer on the recessed upper surface of the first conductive layer and the exposed sidewalls of the first yoke layer;
etching back the second yoke layer up to a surface of the first conductive layer to leave the second yoke layer on the sidewalls of the first yoke layer;
burying a second conductive layer on the first conductive layer in the trench and the sidewalls of the second yoke layer to form a first write interconnection;
forming a magnetoresistance effect element on the first write interconnection;
and
forming a second write interconnection on the magnetoresistance effect element.

6 more elements

Dependencies are inferred from the claim text.