US 2006/0132983 A1 · Magneto-resistive sensor with stopper layer and fabrication process

Abstract

A high output magneto-resistive sensor is provided by suppressing leftover resist mask after lift-off and generation of a fence, and by making it easy to remove the redepositions deposited on the side wall in the track width direction or on the side wall in the sensor height direction of the magnetoresistive film. As a means to solve a fence and lift-off leftover of a resist in a process for forming a track and a process for forming a sensor height, a stopper layer is provided on the magnetoresistive film and the stopper layer on the refill film, and performing lift-off by CMP. By using a metallic material which has a small CMP polishing rate for at least the first stopper layer, the magnetoresistive film and the first stopper layer can be etched simultaneously and a pattern formed. As a result, decrease of the height of the resist mask by RIE can be suppressed and lift-off leftover can be prevented.

Claims20

Dependent claims

A method for fabricating a magneto-resistive sensor which has a pair of magnetic shield layers consisting of a lower shield layer and an upper shield layer and a magnetoresistive film having a laminated structure placed between said pair of magnetic shield layers, and carries a signal current through a laminated plane of said magnetoresistive film, said method comprising:

depositing a first stopper layer for track made of a metallic layer on said magnetoresistive film;
depositing a resist mask at a region which becomes a read element on said first stopper layer for track and removing the region of said magnetoresistive film and said first stopper layer for track except for the read element;
depositing a refill film along a track width direction;
fabricating a second stopper layer for track on said refill film along the track width direction;
and
exposing a top face of said first stopper layer for track by a lift-off method using a chemical mechanical polishing method.

3 more elements

pattering said magnetoresistive film in a sensor height direction and in a track width direction,
wherein pattering in said sensor height direction comprises depositing a first stopper layer for sensor height made of a metallic layer on said magnetoresistive film, forming a resist mask at the region which becomes a read element on said first stopper layer for sensor height and removing the region of said magnetoresistive film and said first stopper layer for sensor height except for the read element, depositing a refill film along the sensor height direction, depositing a second stopper layer for sensor height on said refill film along the sensor height direction, and exposing the top face of said first stopper layer for sensor height by a lift-off method using a chemical mechanical polishing method, and
wherein pattering in said track width direction comprises depositing a first stopper layer for track made of a metallic layer on said magnetoresistive film, forming a resist mask at the region which becomes a read element on said first stopper layer for track and removing the region of said magnetoresistive film and said first stopper layer for track except for the read element, depositing a refill film along the track width direction, depositing a second stopper layer for track on said refill film along the track width direction, and exposing the top face of said first stopper layer for track by a lift-off method using a chemical mechanical polishing method.

Dependencies are inferred from the claim text.

Magneto-resistive sensor with stopper layer and fabrication process

Life of this patent

Magneto-resistive sensor with stopper layer and fabrication process

Life of this patent

Abstract

Claims20