Semiconductor optical modulator integrated resistor for impedance matching using semiconductor doped layer and method of fabricating the same
AssigneeElectronics and Telecommunications Research Institute
InventorsYong Kwon, Joong Choe
Life of this patent
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Abstract
Provided is a semiconductor optical modulator device in which a resistor for impedance matching is integrated in a device in order to improve performance and to reduce cost during the fabrication of an ultra high speed optical modulator module. A doped layer in an epitaxial layer of the optical modulator device is used as a resistor for impedance matching. According to this method, it is possible to more easily realize an optical device compared with optical device fabrication processes in which additional resistors are used in the outside and the inside of the device for impedance matching.
Claims9
A semiconductor optical modulator comprising:
- a semiconductor substrate;
- an n-type semiconductor doped layer, an active layer, and a p-type semiconductor doped layer deposited on the semiconductor substrate in the form of a ridge;
- n-type and p-type electrodes respectively formed on the n-type and p-type semiconductor doped layers;
- and
- a resistor for impedance matching formed between the n-type and p-type electrodes and formed of one of the n-type and p-type semiconductor doped layers.
A method of fabricating a semiconductor optical modulator, comprising the steps of:
- sequentially forming a first semiconductor doped layer, an active layer, a second semiconductor doped layer, and a first insulating layer on a semiconductor substrate;
- patterning the first insulating layer to form a ridge-shaped wave guide structure that reaches the first semiconductor doped layer;
- depositing and patterning a second insulating layer, and performing etching such that the semiconductor substrate is exposed except a region for forming a first electrode and a region for forming a resistor for impedance matching;
- removing the insulating layer and forming a passivation layer on the wave guide structure;
- and
- sequentially forming the first and second electrodes respectively connected to the first and second semiconductor doped layers.
Dependencies are inferred from the claim text.