Step voltage generation
AssigneeIntel Corporation
InventorsHari Giduturi, Kerry Tedrow
Life of this patent
Estimating the term…
Abstract
A step voltage generator includes multiple trimmable voltage references. Each of the trimmable voltage references uses a flash cell with a variable threshold voltage and a feedback loop to trim a reference voltage. The threshold voltage of the flash cell can be programmed to affect the reference voltage.
Claims32
A step voltage generator comprising:
- a plurality of reference voltage generators, each including a transistor with a programmable threshold voltage, the plurality of reference voltage generators to generate reference voltages that vary based on programmed threshold voltages of the transistors;
- and
- a multiplexing circuit to multiplex the reference voltages onto an output node.
A multi-level cell flash memory device comprising:
- an array of flash memory cells, the array of flash memory cells having wordlines coupled thereto;
- and
- at least one step voltage generator coupled to the wordlines, wherein the at least one step voltage generator includes a voltage reference, a plurality of conditioning circuits coupled to receive a reference voltage from the voltage reference, and a multiplexer coupled to receive reference voltages from the plurality of conditioning circuits.
A multi-level cell flash memory device comprising:
- an array of flash memory cells, the array of flash memory cells having wordlines coupled thereto;
- and
- at least one step voltage generator coupled to the wordlines, wherein the at least one step voltage generator includes a plurality of reference voltage generators and a multiplexer, and wherein each of the plurality of reference voltage generators includes a floating gate transistor having a programmable threshold voltage, and a feedback circuit to produce a reference voltage that depends on the programmable threshold voltage.
An electronic system comprising:
- multiple antennas;
- radio frequency circuitry coupled to the multiple antennas;
- a processor coupled to the radio frequency circuitry;
- and
- a memory device including a wordline and a step voltage generator coupled to the wordline, wherein the step voltage generator includes a plurality of reference voltage generators and a multiplexer, and wherein each of the plurality of reference voltage generators includes a floating gate transistor having a programmable threshold voltage, and a feedback circuit to produce a reference voltage that depends on the programmable threshold voltage.
A method comprising modifying threshold voltages of a plurality of floating gate transistors in a plurality of reference voltage circuits to affect the output voltages of the reference circuits, wherein the output voltages of the reference circuits represent thresholds for multi-level cell flash memories.
Dependencies are inferred from the claim text.