US 2006/0131993 A1 · Surface acoustic wave device and method of manufacturing a surface acoustic wave device

Abstract

A surface acoustic wave device including at least an IC region and a surface acoustic wave element region in a semiconductor substrate and formed as a single chip, including, in the IC region, a semiconductor element layer having a semiconductor element and an element insulating film formed to cover the semiconductor element and extending to the surface acoustic wave element region, a wiring layer formed by stacking, on the semiconductor element layer, wiring for establishing connection with the semiconductor element and a wiring insulating film extending to the surface acoustic wave element region and for insulating the wiring, and a piezoelectric thin film formed above the wiring insulating film, and in the surface acoustic wave element region, a surface acoustic wave element formed on the piezoelectric thin film and equipped with an IDT electrode provided with a plurality of electrode fingers, and at least one layer of layer thickness adjusting films having linear shapes and arranged in parallel to and with the same pitch as the electrode fingers of the IDT electrode, and formed above one of the semiconductor substrate, the element insulating film, and the wiring insulating film, and below an area in which the surface acoustic wave element is formed.

Claims8

Dependent claims

A surface acoustic wave device including at least an IC region and a surface acoustic wave element region in a semiconductor substrate and formed as a single chip, comprising:

in the IC region, at least,
a semiconductor element layer having a semiconductor element and an element insulating film formed to cover the semiconductor element and extending to the surface acoustic wave element region;
a wiring layer formed by stacking, on the semiconductor element layer, wiring for establishing connection with the semiconductor element and a wiring insulating film extending to the surface acoustic wave element region and for insulating the wiring;
and
a piezoelectric thin film formed above the wiring insulating film;
and
in the surface acoustic wave element region,
a surface acoustic wave element formed on the piezoelectric thin film and equipped with an IDT electrode provided with a plurality of electrode fingers;
and
at least one layer of layer thickness adjusting films having linear shapes and arranged in parallel to and with the same pitch as the electrode fingers of the IDT electrode, and formed above one of the semiconductor substrate, the element insulating film, and the wiring insulating film, and below an area in which the surface acoustic wave element is formed.

7 more elements

A method of manufacturing a surface acoustic wave device including at least an IC region and a surface acoustic wave element region in a semiconductor substrate and formed as a single chip, comprising:

(a) forming in the IC region of the semiconductor substrate a semiconductor element layer, the step (a) including:
(a1) providing a semiconductor element;
and
(a2) providing an element insulating film covering the semiconductor element;
(b) forming on the semiconductor element layer a wiring layer, the step (b) including:
(b1) providing wiring for establishing connection with the semiconductor element;
and
(b2) providing a wiring insulating film for insulating the wiring stacked on the wiring,
wherein the step (a2) including forming in the surface acoustic wave element region the element insulating film composing the semiconductor element layer, and the step (b2) including forming in the surface acoustic wave element region the wiring insulating film composing the wiring layer in a stacked manner;
(c) forming a piezoelectric thin film above the wiring insulating film in the surface acoustic wave element region;
(d) forming a surface acoustic wave element on the piezoelectric thin film in the surface acoustic wave element region;
and
(e) forming at least one layer of layer thickness adjusting films having linear shapes and arranged in parallel to and with the same pitch as electrode fingers of an IDT electrode above one of the semiconductor substrate, the element insulating film, and the wiring insulating film, and below an area in which the surface acoustic wave element is formed.

10 more elements

Dependencies are inferred from the claim text.

Surface acoustic wave device and method of manufacturing a surface acoustic wave device

Life of this patent

Surface acoustic wave device and method of manufacturing a surface acoustic wave device

Life of this patent

Abstract

Claims8