# US 2006/0131753 A1 · Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications

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- Number: US 2006/0131753 A1
- Document ID: US20060131753A1
- Status: Published application
- Kind: A1
- Application number: 11/341,638
- Filed: 2006-01-30
- Published: 2006-06-22
- Earliest claimed: 2002-01-17
- Inventors: Juha Rantala; Jason Reid; Nungavram Viswanathan; T. Teemu Tormanen
- Web page: https://patentgrep.com/patent/US20060131753A1

## CPC

- H10W 20/081: {by forming openings in the dielectric parts}
- H10W 20/071: {of dielectric parts thereof}
- H10W 20/074: {of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers}
- H10W 20/085: {involving intermediate temporary filling with material}
- H10W 20/086: {involving buried masks}
- H10W 20/48: Insulating materials thereof
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6342: {Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating}
- H10P 14/665: {Porous materials}
- H10P 14/6686: {the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane}
- H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}
- H10W 20/0886: {involving forming a via in a via-level dielectric prior to deposition of a trench-level dielectric}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after densification. Also disclosed is a a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.

## Claims

### Claim 1

An integrated circuit device comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 3.0 or less.

### Claim 2 (depends on 1)

The integrated circuit device of claim 1, wherein the hybrid material is a spin coated material.

### Claim 3 (depends on 2)

The integrated circuit device of claim 2, wherein the hybrid material is a poly(organosiloxane).

### Claim 4 (depends on 2)

The integrated circuit device of claim 2, wherein the hybrid material has a dielectric constant of 2.7 or less.

### Claim 5 (depends on 1)

The integrated circuit device of claim 1, wherein the deposited hybrid material has a glass transition temperature of 200° C. or more.

### Claim 6 (depends on 1)

The integrated circuit device of claim 1, wherein the hybrid layer has a dielectric constant of 2.5 or less.

### Claim 7 (depends on 1)

The integrated circuit device of claim 1, wherein the hybrid material has a repeating -M-O-M-O— back-bone having an organic substituent bound to the backbone, the material having a molecular weight of from 500 to 100,000, where M is silicon and O is oxygen.

### Claim 8 (depends on 7)

The integrated circuit device of claim 7, wherein the molecular weight is from 1500 to 30,000.

### Claim 9 (depends on 8)

The integrated circuit device of claim 8, wherein the organic substituent is fully fluorinated.

### Claim 10 (depends on 9)

The integrated circuit device of claim 9, wherein more than one different organic substituent is bound to the repeating -M-O-M-O— backbone, and wherein each organic substituent is fully or partially fluorinated.

### Claim 11 (depends on 10)

The integrated circuit device of claim 10, wherein the hybrid material comprises organic cross linking groups between adjacent -M-O-M-O— strands.

### Claim 12 (depends on 11)

The integrated circuit device of claim 11, wherein the organic cross linking groups are fully or partially fluorinated cyclobutane groups.

### Claim 13 (depends on 12)

The integrated circuit device of claim 12, wherein the organic cross linking groups are perfluorinated groups.

### Claim 14 (depends on 7)

The integrated circuit device of claim 7, wherein the organic substitutent is a single or multi ring aryl group or an alkyl group having from 1 to 4 carbons.

### Claim 15 (depends on 14)

The integrated circuit device of claim 14, wherein the aryl or alkyl group is fluorinated or deuterated.

### Claim 16 (depends on 15)

The integrated circuit device of claim 15, wherein the aryl or alkyl group is fluorinated.

### Claim 17 (depends on 16)

The integrated circuit device of claim 16, wherein the organic substituent is a phenyl or fluorinated alkyl group having from 1 to 5 carbon atoms.

### Claim 18 (depends on 17)

The integrated circuit device of claim 17, wherein the phenyl group is substituted with fluorinated methyl, ethyl or alkenyl groups.

### Claim 19 (depends on 18)

The integrated circuit device of claim 18, wherein the hybrid material comprises a silicon oxide back-bone.

### Claim 20 (depends on 19)

The integrated circuit device of claim 19, wherein the hybrid material comprises aryl substituents on the silicon oxide backbone.

### Claim 21 (depends on 19)

The integrated circuit device of claim 19, wherein the hybrid material comprises alkyl substituents having from 1 to 4 carbons.

### Claim 22 (depends on 17)

The integrated circuit device of claim 17, wherein the hybrid material comprises cyclobutane groups connecting adjacent silicon oxide strands in a three dimensional network.

### Claim 23 (depends on 22)

The integrated circuit device of claim 22, wherein the hybrid material comprises methyl and phenyl groups.

### Claim 24 (depends on 12)

The integrated circuit device of claim 12, wherein M is Si.

### Claim 25 (depends on 22)

The integrated circuit device of claim 22, wherein the material is mixed with a solvent and a thermal initiator or photoinitiator prior to deposition.

### Claim 26 (depends on 25)

The integrated circuit device of claim 25, wherein a photoinitiator is mixed with the material and solvent prior to spin on, the photoinitiator undergoing free radical formation when exposed to light so as to cause polymerization in the hybrid material.

### Claim 27 (depends on 20)

The integrated circuit device of claim 20, wherein the electromagnetic energy is ultraviolet light.

### Claim 28 (depends on 27)

The integrated circuit device of claim 27, wherein the ultraviolet light is directed on the hybrid layer via a mask so as to expose portions of the hybrid layer, and wherein the developer removes non-exposed portions of the hybrid layer.

### Claim 29 (depends on 7)

The integrated circuit device of claim 7, wherein the hybrid material comprises fluorinated cross linking groups between M elements in a three dimensional -M-O-M-O— lattice.

### Claim 30 (depends on 29)

The integrated circuit device of claim 29, wherein the organic cross linking groups are fully fluorinated.

### Claim 31 (depends on 7)

The integrated circuit device of claim 7, comprising three or more different organic groups bound to the -M-O-M-O backbone.

### Claim 32 (depends on 1)

The integrated circuit device of claim 1, wherein the hybrid material is a siloxane.

### Claim 33 (depends on 7)

The integrated circuit device of claim 7, wherein the hybrid material comprises between 2 and 6 different organic substituents on an inorganic three dimensional backbone matrix.

### Claim 34 (depends on 29)

The integrated circuit device of claim 29, wherein the repeating -M-O-M-O backbone is a three dimensional matrix.

### Claim 35 (depends on 1)

The integrated circuit device of claim 1, wherein the material of the hybrid layer is hydrophobic and results, if exposed to water, in a water contact angle of 90 degrees or more.

### Claim 36 (depends on 1)

The integrated circuit device of claim 1, wherein the substrate is a glass, quartz, semiconductor, ceramic or plastic substrate.

### Claim 37 (depends on 1)

The integrated circuit device of claim 1, wherein the hybrid material is a result of chlorosilane precursors being hydrolyzed and condensed.

### Claim 38 (depends on 36)

The integrated circuit device of claim 36, wherein the substrate is a silicon or germanium substrate.

### Claim 39 (depends on 1)

The integrated circuit device of claim 1, wherein the deposited hybrid material is capable of being heated in supercritical water vapor at 2 atm and at 120 C. for 2 hours without degradation.

### Claim 40 (depends on 1)

The integrated circuit device of claim 1, wherein the hybrid material is a directly patterned material with an aspect ratio of at least 2:1.

### Claim 41 (depends on 1)

The integrated circuit device of claim 1, wherein the hybrid material is perfluorinated.

### Claim 42 (depends on 1)

The integrated circuit device of claim 1, wherein the hybrid material is comprised of less than 10% H.

### Claim 43 (depends on 42)

The integrated circuit device of claim 42, wherein the hybrid material is comprised of less than 5% H.

### Claim 44 (depends on 1)

The integrated circuit device of claim 1, wherein the hybrid material is patterned to form apertures and/or ridges having a feature size of 100 nm or less.

### Claim 45 (depends on 44)

The integrated circuit device of claim 44, wherein the hybrid material has apertures and/or ridges having a feature size of 50 nm or less.

### Claim 46 (depends on 1)

The integrated circuit device of claim 1, wherein the electrically conductive areas comprise aluminum.

### Claim 47 (depends on 1)

The integrated circuit device of claim 1, wherein the electrically conductive areas comprise copper.

### Claim 48 (depends on 1)

The integrated circuit device of claim 1, wherein the integrated circuit device is part of a copper damascene process.

### Claim 49 (depends on 1)

The integrated circuit device of claim 1, wherein the hybrid material comprises organic cross linking groups.

### Claim 50 (depends on 49)

The integrated circuit device of claim 49, wherein the hybrid material is a chemically mechanically polished material.

### Claim 51 (depends on 49)

The integrated circuit device of claim 49, comprising at least 4 layers, each layer comprising alternating regions of the hybrid material and an electrically conductive material.

### Claim 52 (depends on 1)

The integrated circuit device of claim 1, that is within a computer controller.

### Claim 53 (depends on 1)

A computer comprising the integrated circuit device of claim 1.