Metal layer in semiconductor device and method of forming the same
AssigneeDongbu Electronics Co., Ltd.
InventorHyoung-Yoon Kim
Life of this patent
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Abstract
Canting or falling of an upper metal line may be prevented by improving adhesion between an insulation layer and a metal layer. A method for forming a semiconductor which improves adhesion between an insulation layer and a metal layer includes: preparing a substrate formed with a lower metal layer; forming an insulation layer on the substrate; forming a plug after etching the insulation layer; performing a silicon ion implantation process from above the insulation layer; forming an upper metal layer on the insulation layer, the upper metal layer having a bottom layer of a Ti layer or a TiN layer; and siliciding a predetermined region of the bottom layer of the upper metal layer by heat treatment of the substrate.
Claims20
A method of forming a metal layer in a semiconductor device, comprising:
- forming a lower metal layer on a substrate;
- forming an insulation layer on the substrate;
- etching the insulation layer;
- forming a plug after etching the insulation layer;
- performing a silicon ion implantation process from above the insulation layer;
- forming an upper metal layer on the insulation layer, the upper metal layer having a bottom layer of a barrier metal;
- and
- siliciding a predetermined region of the bottom layer by heat treatment of the substrate.
A semiconductor device, comprising:
- a semiconductor substrate;
- a lower metal layer formed on the substrate;
- an insulation layer formed on the semiconductor substrate;
- an upper metal layer formed on the insulation layer, the upper metal layer having a bottom layer, the bottom layer including an adhesion layer and a barrier metal layer;
- and
- a plug connecting the lower metal layer and the upper metal layer.
Dependencies are inferred from the claim text.