Semiconductor device and manufacturing method of the same
AssigneesSanyo Electric Co., Ltd., Rohm Co., Ltd.
InventorsMitsuo Umemoto, Kazumasa Tanida
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AssigneesSanyo Electric Co., Ltd., Rohm Co., Ltd.
InventorsMitsuo Umemoto, Kazumasa Tanida
Estimating the term…
The invention realizes excellent electrical and mechanical connection between electrodes in a packaging structure where a plurality of semiconductor chips having electrodes are connected with each other through the low-melting metallic members. Bump electrodes are formed on a front surface of a first semiconductor chip. Penetrating holes are formed in a second semiconductor chip, and a penetrating electrode having a gap in a center is formed in each of the penetrating holes. Low-melting metallic members are interposed between connecting surfaces of the bump electrodes and the penetrating electrodes, and a part of each of the low-melting metallic members flows in each of the gaps of the penetrating electrodes when dissolved. This prevents short-circuiting between the bump electrodes which is caused by oversupplying the low-melting metallic members between the adjacent bump electrodes.
1-4. (canceled)
A method of manufacturing a semiconductor device, comprising:
A method of manufacturing a semiconductor device, comprising:
Dependencies are inferred from the claim text.