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US 2006/0131713 A1Published application
Semiconductor device manufacturing method, semiconductor device, laminated semiconductor device, circuit substrate, and electronic apparatus
AssigneeSeiko Epson Corporation
InventorMotohiko Fukazawa
Life of this patent
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Abstract
A semiconductor device includes a semiconductor element, a penetrating electrode which penetrates the semiconductor element, and a resin layer which selectively covers side walls and corners of the semiconductor element.
Claims13
A semiconductor device manufacturing method comprising:
- affixing a semiconductor wafer, which includes a plurality of semiconductor element sections which a conductive material is buried in, to a supporting body via an adhesive layer;
- forming a penetrating electrode which penetrates the plurality of semiconductor element sections and has the conductive material, by thinning the semiconductor wafer;
- cutting the semiconductor wafer so that the supporting body remains, and dividing the semiconductor wafer into the plurality of semiconductor element sections;
- forming a resin layer which selectively covers side walls and corners of the plurality of semiconductor element sections formed by cutting the semiconductor wafer;
- and
- peeling the semiconductor element sections from the supporting body.
3 more elements
A semiconductor device comprising:
- a semiconductor element;
- a penetrating electrode which penetrates the semiconductor element;
- and
- a resin layer which selectively covers the semiconductor element.
1 more element
Dependencies are inferred from the claim text.