Advanced cavity structure for wafer level chip scale package

Abstract

The present invention provides an advanced cavity structure for optically sensitive devices in wafer level chip scale package and methods of manufacturing thereof. Image sensor or light detection integrated circuits are formed on substrate. Substantially absorptive bleached cavity walls are formed about the image sensor or light detection integrated circuits. Upon attaching a transparent layer to the bleached cavity walls and above the image sensor or light detection integrated circuits, open chambers are formed thereby permitting the image sensor or light detection integrated circuits to receive and manipulate signals without decreasing or decaying the optical sensitivity of the incident light. Furthermore, individual image sensor or light detection integrated circuits may be separated from each other to comprise wafer level chip scale packages of at least one image sensor or light detection integrated circuits, at least one transparent layer, and at least one open chamber.

Dependencies are inferred from the claim text.