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US 2006/0131699 A1Published application
Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a buried insulating layer
OwnerMichael Raab, Andy Wei +1inventors
InventorsMichael Raab, Andy Wei, Manfred Horstmann
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Abstract
By using an implantation technique for forming a buried insulation layer, an SOI-type configuration may be achieved for hybrid orientation substrates, thereby significantly enhancing the further fabrication processes in forming circuit elements on differently oriented semiconductor regions. Consequently, process complexity for methodology and production steps is significantly reduced compared to fabrication processes based on conventional hybrid orientation substrates.
Claims24
A method, comprising:
- forming a hybrid semiconductor substrate by forming a first crystalline semiconductor layer having a first characteristic above a second crystalline semiconductor layer having a second characteristic differing from said first characteristic;
- forming an opening in said first crystalline semiconductor layer to expose a portion of said second crystalline semiconductor layer;
- forming a crystalline semiconductor material in said opening by selective epitaxial growth to form said crystalline semiconductor material having said second characteristic;
- and
- forming a buried insulation layer in said hybrid substrate under said formed crystalline semiconductor material in said opening by ion implantation and annealing.
2 more elements
A substrate for forming transistor elements, comprising:
- a base substrate;
- a buried insulation layer formed on said base substrate;
- a first crystalline semiconductor region formed on said buried insulation layer and having a first characteristic representing at least one of a crystallographic orientation, a type of semiconductor material and an intrinsic strain;
- a second crystalline semiconductor region formed on said buried insulation layer and having a second characteristic differing from said first characteristic and representing at least one of a crystallographic orientation, a type of semiconductor material and an intrinsic strain;
- and
- an isolation structure laterally isolating said first and second semiconductor regions.
3 more elements
A semiconductor device, comprising:
- a base substrate;
- a buried insulation layer formed on said base substrate;
- a first crystalline semiconductor region formed on said buried insulation layer and having a first characteristic representing at least one of a crystallographic orientation, a type of semiconductor material and an intrinsic strain;
- a second crystalline semiconductor region formed on said buried insulation layer and having a second characteristic differing from said first characteristic and representing at least one of a crystallographic orientation, a type of semiconductor material and an intrinsic strain;
- an isolation structure laterally isolating said first and second semiconductor regions;
- a first transistor element formed in and on said first crystalline semiconductor region;
- and
- a second transistor element formed in and on said second crystalline semiconductor region.
5 more elements
Dependencies are inferred from the claim text.