Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them

An equipment for manufacturing semiconductor device, comprising:

• a wafer stage having a rotary mechanism;
• a light source to emit a light beam toward a rotation center of said wafer stage to irradiate a principal plane of a wafer set on said wafer stage;
• a detector to measure an intensity of scattered light from crystal defects in said wafer;
• a computer to analyze a rotation angle dependence of the measured intensity;
• a marking unit to form a reference ID mark on said wafer to indicate a crystal orientation of said wafer;
• and
• a chamber covering at least said wafer stage, wafer, light source, and detector, to block external light.

An equipment for manufacturing semiconductor device, comprising:

• a wafer stage;
• a light source to emit light onto a principal plane of a wafer set on said wafer stage;
• a photodetector having a photosensitive face surrounding an emission mouth of said light source and inclined with respect to an advancing direction of the emitted light, said photodetector measuring an intensity of scattered light from etch pits formed on said principal plane of said wafer;
• a computer to analyze a rotation angle dependence of the measured intensity;
• a marking unit to form a reference ID mark on said wafer, to indicate a crystal orientation of said wafer;
• and
• a chamber covering at least said wafer stage, wafer, light source, and photodetector, to block external light.

A method of manufacturing semiconductor device, comprising:

• emitting a light beam onto a principal plane of a wafer;
• measuring an intensity of scattered light from crystal defects in said wafer;
• analyzing a rotation angle dependence of the measured intensity;
• and
• determining a crystal orientation of said wafer according to the analyzed rotation angle dependence.

A method of manufacturing a semiconductor wafer, comprising:

• forming said wafer by slicing a monocrystalline ingot;
• removing undulation on a principal plane of said wafer by carrying out an etching process on said wafer, said etching process using an alkali solution and involving different etching speeds depending on crystal orientations;
• measuring a crystal orientation of said wafer according to etch pits formed on said principal plane by said etching process;
• forming a reference ID mark on said wafer, to indicate the measured crystal orientation of said wafer;
• and
• removing said etch pits.