Electronic device, assembly and methods of manufacturing an electronic device
AssigneeKoninklijke Philips Electronics N.V.
InventorsFreddy Roozeboom, Adrianus Alphonsus Buijsman, Patrice Gamand, Antonius Kemmeren, Gerardus Hubert
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Abstract
A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.
Claims19
An electronic device comprising a semiconductor substrate having a first and a second side and provided with a capacitor and a vertical interconnect through the substrate extending from the first to the second side, on which first side the capacitor is present, characterized in that the capacitor is a vertical trench capacitor provided with a plurality of trenches in which a layer of dielectric material is present between a first and a second conductive surface, said layer of dielectric material also being used as insulation between the substrate and the vertical interconnect.
A method of manufacturing an electronic device comprising a semiconductor substrate having a first and a second side and provided with a capacitor and a vertical interconnect extending from the first to the second side, on which first side the capacitor is present, said method comprising the steps of:
- providing first trenches in the substrate including the step of etching from the first side of the substrate;
- providing second trenches in the substrate by etching from one side of the substrate and opening the second trenches by removing material from the opposite side of the substrate;
- providing said first trenches with a conductive surface;
- applying a layer of dielectric material on the substrate, covering at least the first side of the substrate and the inner faces of the first and second trenches;
- and
- applying electrically conductive material in the first trenches and in the second trenches, which conductive material of the first trenches together with the layer of dielectric material and the conductive surface forms the capacitor, and which conductive material of the second trenches forms the vertical interconnects.
Dependencies are inferred from the claim text.