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US 2006/0131689 A1Published application
Semiconductor device and fabrication method thereof
AssigneeFujitsu Limited
InventorYoshikazu Tsukidate
Life of this patent
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Abstract
A semiconductor device includes a device isolation structure formed in a substrate so as to define a device region and a semiconductor device formed in the device region, wherein the device isolation structure includes a device isolation trench formed in the substrate so as to define the device region and a device isolation insulator filling the device isolation trench, the device isolation insulator including a lower part and an upper part, a stepped part being formed between the lower part and the upper part.
Claims19
A semiconductor device, comprising:
- a substrate;
- a device isolation structure formed in said substrate so as to define a device region;
- and
- a semiconductor device formed in said device region,
- wherein said device isolation structure comprises a device isolation trench formed in said substrate so as to define said device region and a device isolation insulator filling said device isolation trench,
- said device isolation insulator comprising a lower part and an upper part,
- a stepped part being formed between said lower part and said upper part.
4 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- forming a mask pattern of a first insulation film having an opening on a semiconductor substrate and forming a device isolation trench in said semiconductor substrate in correspondence to said opening while using said mask pattern as a mask;
- depositing a second insulation film on said mask pattern so as to fill said device isolation trench;
- removing said second insulation film by a chemical mechanical polishing process until said first insulation film is exposed and forming a device isolation insulator by said second insulation film remaining in said device isolation trench;
- exposing a surface of said semiconductor substrate by removing said mask pattern;
- and
- growing a semiconductor layer epitaxially on said exposed surface of said semiconductor substrate.
3 more elements
Dependencies are inferred from the claim text.