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US 2006/0131679 A1Published application
Systems and methods for electrical contacts to arrays of vertically aligned nanorods
AssigneePalo Alto Research Center Incorporated
InventorsThomas Hantschel, Noble Johnson, Peter Kiesel, Christian Van De Walle, William Wong
Life of this patent
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Abstract
Systems and methods may provide electrical contacts to an array of substantially vertically aligned nanorods. The nanorod array may be fabricated on top of a conducting layer that serves as a bottom contact to the nanorods. A top metal contact may be applied to a plurality of nanorods of the nanorod array. The contacts may allow I/V (current/voltage) characteristics of the nanorods to be measured.
Claims21
A detector having a nanorod, the nanorod comprising:
- a middle portion;
- a first end portion, the first end portion being metallized;
- and
- a second end portion, the second end portion being metallized,
- a part of the middle portion of the nanorod being metallized and connected to a third electrode.
2 more elements
(canceled)
A method of fabricating a nanorod device, comprising:
- forming a nanorod on a surface of a substrate, the nanorod extending in a direction non-parallel with the surface of the substrate;
- depositing a first sacrificial layer to encapsulate the nanorod;
- removing a top portion of the first sacrificial layer to expose a top of the nanorod, the top portion of the first sacrificial layer having a first thickness that is substantially uniform across an entire surface of the first sacrificial layer, the removing of the top portion of the sacrificial layer leaving a bottom portion of the first sacrificial layer remaining on the substrate, the bottom portion of the first sacrificial layer having a second thickness that is substantially uniform across an entire surface of the remaining portion of first sacrificial layer;
- and
- forming a first contact layer on the bottom portion of the first sacrificial layer, the first contact layer being in electrical contact with the top of the nanorod.
2 more elements
A method of fabricating a nanorod device, comprising:
- forming a nanorod on a surface of a substrate, the nanorod extending in a direction non-parallel with the surface of the substrate;
- depositing a first sacrificial layer to encapsulate the nanorod;
- removing a top thickness of the first sacrificial layer to expose a top of the nanorod;
- forming a first contact layer on the first sacrificial layer, the first contact layer being in electrical contact with the top of the nanorod;
- metallizing the top of the nanorod, the first contact layer being a first electrode;
- bonding a handle wafer on the first contact layer;
- removing the growth substrate;
- removing a bottom thickness of the first sacrificial layer to expose a bottom of the nanorod;
- metallizing the exposed bottom of the nanorod;
- and
- connecting the metallized bottom to a second electrode.
8 more elements
A method of fabricating a nanorod device, comprising:
- forming a nanorod on a surface of a substrate, the nanorod extending in a direction non-parallel with the surface of the substrate;
- depositing a first sacrificial layer to encapsulate the nanorod;
- removing a top thickness of the first sacrificial layer to expose a top of the nanorod;
- forming a first contact layer on the first sacrificial layer, the first contact layer being in electrical contact with the top of the nanorod;
- metallizing a bottom of the nanorod, the substrate being a first electrode in electrical contact with the nanorod;
- metallizing the top of the nanorod, the first contact layer being a second electrode in electrical contact with the nanorod;
- removing a top thickness of the first contact layer to expose a portion of the top of the nanorod;
- depositing a second sacrificial layer to encapsulate the portion of the top;
- removing a top thickness of the second sacrificial layer to expose a part of the portion of the top
- metallizing the part of the portion of the top;
- and
- forming a second contact layer on the second sacrificial layer, the second contact layer being a third electrode in electrical contact with the part of the portion of the top.
9 more elements
Dependencies are inferred from the claim text.