Method of manufacturing surface acoustic wave device and surface acoustic wave device

A surface acoustic wave device formed in one chip and including over a semiconductor substrate at least an IC region and a surface acoustic wave element region that are horizontally disposed, comprising:

• a semiconductor element layer including a semiconductor element and an insulation layer in the IC region over the semiconductor substrate, the insulation layer covering the semiconductor element and being deposited also in the surface acoustic wave element region;
• a wire layer formed over the semiconductor element layer by depositing wires coupled to the semiconductor element and a wire insulating film that provides insulation among the wires and is deposited also in the surface acoustic wave element region;
• an interlayer insulating film formed on the wire insulating film in the IC region and the surface acoustic wave element region, and having a flattened surface;
• a piezoelectric thin film formed on the interlayer insulating film;
• and
• a surface acoustic wave element formed on the piezoelectric thin film in the surface acoustic wave element region.

A method of manufacturing a surface acoustic wave device formed in one chip and including over a semiconductor substrate at least an IC region and a surface acoustic wave element region that is disposed above the IC region, the method comprising:

• forming in the IC region over the semiconductor substrate a semiconductor element layer that includes a semiconductor element and an insulation layer covering the semiconductor element;
• forming over the semiconductor element layer a wire layer that includes a plurality of wires coupled to the semiconductor element and a wire insulating film deposited over the plurality of wires to provide insulation among the wires;
• forming on the wire layer an interlayer insulating film having a flattened surface;
• forming a piezoelectric thin film on the interlayer insulating film;
• and
• forming a surface acoustic wave element on the piezoelectric thin film in the surface acoustic wave element region.

A surface acoustic wave device formed in one chip and including over a semiconductor substrate at least an IC region and a surface acoustic wave element region that is disposed above the IC region, comprising:

• a semiconductor element layer that includes a semiconductor element and an insulation layer covering the semiconductor element in the IC region on the semiconductor substrate;
• a wire layer formed over the semiconductor element layer by depositing wires coupled to the semiconductor element and a wire insulating film for providing insulation among the wires;
• an interlayer insulating film formed on the wire insulating film in the IC region, and having a flattened surface;
• a piezoelectric thin film formed on the interlayer insulating film;
• and
• a surface acoustic wave element formed on the piezoelectric thin film in the surface acoustic wave element region.