Electronic device including dielectric layer, and a process for forming the electronic device

A process for forming an electronic device comprising:

• forming a dielectric layer over a workpiece using an atomic layer deposition, wherein:
• the dielectric layer comprises:
• oxygen;
• a first metallic element;
• and
• a second metallic element different from the first element,
• wherein:
• the first metallic element has a single oxidation state and an oxidation state value;
• and
• the second metallic element has the single oxidation state and the oxidation state value,
• the dielectric layer comprises more than 0.067 atomic % of the first metallic element;
• and
• the dielectric layer comprises more than 0.067 atomic % of the second metallic element;
• and
• forming an electrode over the dielectric layer.

An electronic device comprising:

• a gate dielectric layer that includes grains, wherein:
• the gate dielectric layer comprises a material that is capable of affecting sizes of the grains or a size distribution of the grains, wherein the gate dielectric layer comprises more than 0.067 atomic % of atoms from the material;
• the material comprises Zr;
• and
• the gate dielectric layer further comprises Hf;
• and
• a first gate electrode within a PMOS portion of the electronic device;
• and
• a second gate electrode within an NMOS portion of the electronic device, wherein a composition of the second gate electrode is different from a composition of the first gate electrode.