Semiconductor device and production method therefor

A semiconductor device comprising a MIS type field effect transistor, wherein the transistor comprising:

• a silicon substrate;
• a gate insulating film comprising a high-dielectric-constant
• metal oxide film and a silicon containing insulating film lying between the metal oxide film and the silicon substrate;
• and
• a silicon containing gate electrode formed on the gate insulating film;
• and
• wherein the high-dielectric-constant metal oxide film has a nitrogen containing section at least on each of its lateral face sides.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a high-dielectric-constant metal oxide film over a silicon substrate after forming a silicon containing insulating film;
• forming a film of a silicon containing gate electrode material over the high-dielectric-constant metal oxide film;
• forming a gate electrode by patterning the film of a gate electrode material;
• forming a pattern of the high-dielectric-constant metal oxide film and the silicon containing insulating film under the gate electrode by patterning the high-dielectric-constant metal oxide film and the silicon containing insulating film;
• forming a first silicon oxide film over the entire surface at a temperature of not higher than 600° C.;
• forming a silicon nitride film on the first silicon oxide film;
• forming a second silicon oxide film on the silicon nitride film;
• and
• etching back the second silicon oxide film, the silicon nitride film and the first silicon oxide film and thereby forming a sidewall on each lateral face of the gate electrode with the first silicon oxide film and the silicon nitride film lying therebetween.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a high-dielectric-constant metal oxide film over a silicon substrate after forming a silicon containing insulating film;
• forming a film of a silicon containing gate electrode material over the high-dielectric-constant metal oxide film;
• forming a gate electrode by patterning the film of a gate electrode material;
• forming a pattern of the high-dielectric-constant metal oxide film under the gate electrode by patterning the high-dielectric-constant metal oxide film;
• removing at least each lateral face section of the pattern of the high-dielectric-constant metal oxide film by means of isotropic etching to form a recess;
• forming a silicon nitride film over the entire surface so as to fill up the recess;
• etching the silicon nitride film in such a way that, inside the recess, at least the silicon nitride film covering each lateral face of the high-dielectric-constant metal oxide film can remain;
• and
• forming a silicon oxide film over the entire surface and then etching back the silicon oxide film, and thereby forming a sidewall on each lateral face of the gate electrode.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a high-dielectric-constant metal oxide film over a silicon substrate after forming a silicon containing insulating film;
• forming a film of a silicon containing gate electrode material over the high-dielectric-constant metal oxide film;
• forming a gate electrode by patterning the film of a gate electrode material;
• forming a pattern of the high-dielectric-constant metal oxide film under the gate electrode by patterning the high-dielectric-constant metal oxide film;
• applying a nitriding treatment to each lateral face section of the pattern of the high-dielectric-constant metal oxide film;
• and
• forming a silicon oxide film over the entire surface and then etching back the silicon oxide film, and thereby forming a sidewall on each lateral face of the gate electrode.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a high-dielectric-constant metal oxide film over a silicon substrate after forming a silicon containing insulating film;
• forming a film of a silicon containing gate electrode material over the high-dielectric-constant metal oxide film;
• forming a gate electrode by patterning the film of a gate electrode material;
• forming a pattern of the high-dielectric-constant metal oxide film under the gate electrode by patterning the high-dielectric-constant metal oxide film;
• forming a silicon oxide film over the entire surface at a temperature of not higher than 600° C.;
• and
• etching back the silicon oxide film, and thereby forming a sidewall on each lateral face of the gate electrode.