SRAM cell
OwnerBertrand Borot, Philippe Coronelinventors
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Abstract
An SRAM cell with four transistors and two resistors formed in a semiconductor substrate, the transistors being formed in pairs in two active regions of the substrate, the resistors being formed by leakage capacitors, a first electrode of the capacitors being common and formed of a high supply line of the cell buried in an area separating the active regions.
Claims4
An SRAM cell with four transistors and two resistors formed in a semiconductor substrate, the transistors being formed in pairs in two active regions of the substrate, wherein the resistors are formed by leakage capacitors, a first electrode of the capacitors being common and formed of a high supply line of the cell buried in an area separating the active regions.
Dependencies are inferred from the claim text.