Field effect transistor with buried gate pattern
AssigneeSamsung Electronics Co., Ltd.
InventorsMing Li, Dong-Uk Choi, Chang-Woo Oh, Dong-Won Kim, Min-Sang Kim, Sung-Hwan Kim, Kyoung-Hwan Yeo
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Abstract
A field effect transistor includes a buried gate pattern that is electrically isolated by being surrounded by a tunneling insulating film. The field effect transistor also includes a channel region that is floated by source and drain regions, a gate insulating film, and the tunneling insulating film. The buried gate pattern and the tunneling insulating film extend into the source and drain regions. Thus, the field effect transistor efficiently stores charge carriers in the buried gate pattern and the floating channel region.
Claims22
A field effect transistor comprising:
- a buried gate pattern comprised of a semiconductor material;
- a tunneling insulating film that surrounds the buried gate pattern;
- and
- a channel region comprised of a semiconductor material bounded by source and drain regions, a gate insulating film, and the tunneling insulating film;
- wherein the buried gate pattern and the tunneling insulating film extend into the source and drain regions.
A method of forming a field effect transistor, comprising:
- etching at least one trench around a remaining portion of a sacrificial layer, and around a remaining portion of a semiconductor layer for forming a channel region;
- removing the remaining portion of the sacrificial layer to form a tunnel;
- forming a tunneling insulating film on surfaces of the tunnel;
- and
- forming a buried gate pattern comprised of a semiconductor material surrounded by the tunneling insulating film within the tunnel.
Dependencies are inferred from the claim text.