N-type schottky barrier tunnel transistor and manufacturing method thereof
AssigneeElectronics and Telecommunications Research Institute
InventorsYark Kim, Moon Jang, Jae Shin, Seong Lee
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Abstract
An n-type SBTT and a manufacturing method thereof are provided. The SBTT includes a silicon layer, a gate, a double layer that has a rare-earth metal suicide layer and a transition metal silicide layer. The silicon layer has a channel region. The gate is formed in an overlapping manner on the channel region and has a gate dielectric layer on its interface with respect to the silicon layer. The double layer is formed as a source/drain that has the channel region interposed on the silicon layer.
Claims11
An n-type Schottky barrier tunnel transistor comprising:
- a silicon layer for a channel region;
- a gate overlapping on the channel region on the silicon layer;
- a dielectric layer on an interface between the silicon layer and the gate;
- rare-earth metal silicide layers formed as a source/drain that has the channel region interposed on the silicon layer;
- and
- transition metal silicide layers formed on the rare-earth metal silicide layer, for constituting the source/drain together with the rare-earth metal silicide layers.
A method for manufacturing an n-type Schottky barrier tunnel transistor, comprising:
- introducing a silicon layer for a channel region;
- forming, on the silicon layer, a gate overlapped on the channel region with a dielectric layer interposed on an interface of the silicon layer;
- forming a rare-earth metal silicide layer on the silicon layer beside of the gate;
- and
- forming a transition metal silicide layer on the rare-earth metal silicide layer to form a source/drain that includes the rare-earth metal silicide layer and the transition metal silicide layer.
A method for manufacturing an n-type Schottky barrier tunnel transistor, comprising:
- introducing a silicon layer for a channel region;
- forming a gate overlapped on the channel region with a dielectric layer interposed on an interface of the silicon layer;
- forming a rare-earth metal layer on the silicon layer beside the gates;
- forming a transition metal layer on the rare-earth metal layer;
- and
- thermally treating the rare-earth metal layer and the transition metal layer to form a source/drain that includes a double layer having a rare-earth metal silicide layer and a transition metal silicide layer.
Dependencies are inferred from the claim text.