MOS device, CMOS device, and fabricating method thereof
AssigneeDongbuAnam Semiconductor Inc.
InventorShin Jong
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Abstract
A MOS or CMOS device includes a substrate with an active area, a gate oxide layer on the substrate, a gate on the gate oxide layer, first sidewalls on sides of the gate, the first sidewalls contacting the gate oxide layer, spacers formed outside the second sidewalls, and a salicide layer formed by depositing a metal layer on the gate and the active area of the substrate and annealing the deposited metal layer.
Claims23
A metal oxide semiconductor (MOS) device comprising:
- a substrate having an active area;
- a gate oxide layer on the substrate;
- a gate on the gate oxide layer;
- first sidewalls on sides of the gate, the first sidewalls contacting the gate oxide layer;
- spacers outside the first sidewalls;
- and
- a salicide layer on the gate and the active area of the substrate.
A complementary metal oxide semiconductor (CMOS) device comprising an NMOS element and a PMOS element, each of the NMOS element and the PMOS element including:
- a substrate having an active area;
- a gate oxide layer on the substrate;
- a gate on the gate oxide layer;
- first sidewalls on sides of the gate, the first sidewalls contacting the gate oxide;
- spacers outside the first sidewalls;
- and
- a salicide layer on the gate and the active area of the substrate.
A method of fabricating a complementary metal oxide semiconductor (CMOS) device, comprising:
- patterning a first insulating layer on a substrate to expose a portion of the substrate;
- forming a gate insulating layer on the exposed portion of the substrate;
- depositing a gate material on the gate insulating layer and planarizing the deposited gate material;
- patterning the gate material and the first insulating layer at a predetermined width to thereby form a gate and first sidewalls, respectively;
- forming spacers from a second insulating layer on the substrate, adjacent to the first sidewalls;
- forming source and drain regions by implanting first impurity ions into the substrate adjacent to the spacers;
- depositing a metal layer on the gate and the substrate;
- and
- annealing the metal layer to form a salicide.
Dependencies are inferred from the claim text.