Diode with reduced forward-bias resistance and shunt capacitance
OwnerJohn Poultoninventor
Life of this patent
Estimating the term…
Abstract
A diode having reduced forward-bias resistance and shunt capacitance. The diode includes a lightly doped region of a semiconductor substrate, a carrier injection region and an ohmic contact region. The carrier injection region is disposed within the lightly doped region and has a plurality of sides of substantially uniform length. The ohmic contact region is disposed about a perimeter of the carrier injection region.
Claims32
A diode comprising:
- a first doped region;
- a first carrier injection region disposed within the first doped region and having a plurality of sides of substantially uniform length;
- and
- an ohmic contact region disposed about a perimeter of the first carrier injection region.
A diode comprising:
- a first doped region;
- a plurality of carrier injection regions disposed within the first doped region;
- an ohmic contact region disposed about the perimeter of each of the plurality of carrier injection regions;
- and
- a conductive structure coupled to each of the plurality of carrier injection regions.
A method of forming a diode, the method comprising:
- forming a first doped region in a semiconductor substrate;
- forming, within the first doped region, a first carrier injection region having a plurality of sides of substantially uniform length;
- and
- forming an ohmic contact region about a perimeter of the first carrier injection region.
A method of forming a diode, the method comprising:
- forming a first doped region within a semiconductor substrate;
- forming a plurality of carrier injection regions disposed within the first doped region;
- forming an ohmic contact region about the perimeter of each of the plurality of carrier injection regions;
- and
- forming a conductive structure coupled to each of the plurality of carrier injection regions.
Computer-readable media having information embodied therein that includes a description of a diode formed within a substrate of an integrated circuit device, the information including descriptions of:
- a first doped region within the substrate of the integrated circuit device;
- a first carrier injection region disposed within the first doped region and having a plurality of sides of substantially uniform length;
- and
- an ohmic contact region disposed about a perimeter of the first carrier injection region.
Dependencies are inferred from the claim text.