Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsYoshio Ozawa, Shigehiko Saida, Yuji Takeuchi, Masanobu Saito
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film having a film thickness periodically and continuously changing in a channel width direction of the non-volatile memory cell, a floating gate electrode provided on the tunnel insulating film, a control gate electrode provided above the floating gate electrode, and an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.
Claims5
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a non-volatile memory cell provided on the semiconductor substrate,
- the non-volatile memory cell comprising:
- a tunnel insulating film having a film thickness periodically and continuously changing in a channel width direction of the non-volatile memory cell;
- a floating gate electrode provided on the tunnel insulating film;
- a control gate electrode provided above the floating gate electrode;
- and
- an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a non-volatile memory cell provided on the semiconductor substrate,
- the non-volatile memory cell comprising:
- a tunnel insulating film having an approximately constant film thickness, a height of an interface between the tunnel insulating film and the semiconductor substrate periodically and continuously changing in a channel width direction of the non-volatile memory cell;
- a floating gate electrode provided on the tunnel insulating film, a height of an interface between the floating gate electrode and the tunnel insulating film periodically and continuously changing in the channel width direction of the non-volatile memory cell;
- a control gate electrode above the floating gate electrode;
- and
- an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.
-20. (canceled)
Dependencies are inferred from the claim text.