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US 2006/0131628 A1Published application
Nonvolatile memory and fabrication method thereof
AssigneeWinbond Electronics Corp.
InventorsTseung-Yuen Tseng, Chih-Yi Liu, Pei-Hsun Wu
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Abstract
A nonvolatile memory and a fabrication method thereof. The nonvolatile memory includes a substrate, a bottom electrode deposited on the substrate, a resistor layer deposited on the bottom electrode, and a top electrode on the resistor layer. The bottom electrode includes LaNiO3 and the resistor layer includes doped SrZrO3.
Claims22
A non-volatile memory, comprising:
- a substrate;
- a bottom electrode comprising LaNiO3 film disposed over the substrate;
- a resistor layer comprising SrZrO3 film disposed on the bottom electrode;
- and
- a top electrode disposed on the resistor layer.
2 more elements
A method of fabricating a non-volatile memory, comprising:
- providing a substrate;
- forming a bottom electrode over the substrate by sputtering;
- forming a resistor layer comprising SrZrO3 film on the bottom electrode;
- and
- forming a top electrode on the resistor layer.
2 more elements
A method of fabricating a non-volatile memory, comprising:
- providing a substrate;
- forming a dielectric layer over the substrate;
- forming a bottom electrode comprising LaNiO3 film on the dielectric layer;
- forming a resistor layer comprising SrZrO3 film on the bottom electrode;
- and
- forming a top electrode on the resistor layer.
3 more elements
Dependencies are inferred from the claim text.