Ferroelectric material, its manufacture method and ferroelectric memory
AssigneesFujitsu Limited, Tokyo Institute of Technology
InventorsMasao Kondo, Kenji Maruyama, Risako Ueno, Hiroshi Funakubo, Hiroshi Uchida, Seiichiro Koda, Hiroshi Nakaki
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Abstract
BiFeO3 precursor solution is coated on the surface of an underlying member. Teat treatment is performed after the coating to form a dielectric film. The dielectric film is heated in a non-oxidizing atmosphere to crystallize the dielectric film. With this method, a ferroelectric material can be obtained which contains constituent elements of Bi, Fe and O and has crystal lattice of a tetragonal or orthorhombic system.
Claims18
A ferroelectric material containing constituent elements of Bi, Fe and O and having crystal lattice of a tetragonal or orthorhombic system.
A method of manufacturing a ferroelectric film comprising steps of:
- (a) coating BiFeO3 precursor solution on a surface of an underlying member;
- (b) performing heat treatment after the coating to form a dielectric film;
- and
- (c) heating the dielectric film in a non-oxidizing atmosphere to crystallize the dielectric film.
A ferroelectric memory comprising:
- a semiconductor substrate;
- source and drain regions formed in a surface layer of the semiconductor substrate and disposed on both sides of a channel region;
- a gate insulating film formed on the channel region and including a film made of a ferroelectric material containing constituent elements of Bi, Fe and O and having crystal lattice of a tetragonal or orthorhombic system.
A ferroelectric memory comprising:
- a switching element formed on a semiconductor substrate for switching a current path between a pair of terminals;
- and
- a capacitor connected to one terminal of the switching element and including a capacitor dielectric film made of a ferroelectric material containing constituent elements of Bi, Fe and O and having crystal lattice of a tetragonal or orthorhombic system.
Dependencies are inferred from the claim text.