CMOS image sensor and method for fabricating the same
AssigneeDongbuAnam Semiconductor Inc.
InventorKwan Koh
Life of this patent
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Abstract
A CMOS image sensor and a method for fabricating the same in which color balance is enhanced by forming photodiodes to have a depth varied according to the wavelength of incident light to be received through a color filter layer. The predetermined depth varies, from shallow to deep, as the wavelength of the band of incident light increases, such that the predetermined depth is shallowest for the shortest wavelength, e.g., blue light, of the bands of incident light and is deepest for the longest wavelength, e.g., red, of the bands of incident light.
Claims25
A CMOS image sensor having a plurality of active devices for receiving each of a corresponding plurality of bands of incident light according to wavelength, the sensor comprising:
- a semiconductor substrate;
- and
- an active region for each band of incident light, wherein each active region is formed to have a predetermined depth relative to each band of incident light.
A method for fabricating a CMOS image sensor having a plurality of active devices for receiving each of a corresponding plurality of bands of incident light according to wavelength, the method comprising:
- forming over a semiconductor substrate an active region for each band of incident light, wherein each active region has a predetermined depth relative to each band of incident light.
Dependencies are inferred from the claim text.