# US 2006/0131624 A1 · Solid-state imaging device

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- Number: US 2006/0131624 A1
- Document ID: US20060131624A1
- Status: Published application
- Kind: A1
- Application number: 11/298,535
- Filed: 2005-12-12
- Published: 2006-06-22
- Earliest claimed: 2004-12-16
- Assignees: Matsushita Electric Industrial Co., Ltd.
- Inventors: Motonari Katsuno; Ryouhei Miyagawa; Masayuki Matsunaga
- Web page: https://patentgrep.com/patent/US20060131624A1

## CPC

- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/014: {of CMOS image sensors}
- H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes}
- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H10F 39/80373: {characterised by the gate of the transistor}
- H10F 39/807: {Pixel isolation structures}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.

## Claims

### Claim 1

A solid-state imaging device comprising:
a photodiode which performs photoelectric conversion of incident light into signal charge;
a transfer transistor which transfers the signal charge accumulated in said photodiode;
a detection capacitor which accumulates the signal charge transferred by said transfer transistor; and
a reset transistor which discharges, into a drain, the signal charge accumulated in said detection capacitor,
wherein said photodiode, said transfer transistor, said detection capacitor and said reset transistor are formed on a semiconductor substrate, and
ions are distributed at least on a sidewall of a channel below a gate electrode of said reset transistor, the ions enhancing generation of carriers of an opposite polarity to the channel.

### Claim 2 (depends on 1)

The solid-state imaging device according to claim 1,
wherein the ions enhancing the generation of the carriers of the opposite polarity to the channel are distributed seamlessly from below the gate electrode of said reset transistor over said detection capacitor or the drain.

### Claim 3 (depends on 1)

The solid-state imaging device according to claim 1,
wherein said reset transistor has a gate width which is shorter than a gate length.

### Claim 4 (depends on 1)

The solid-state imaging device according to claim 1,
wherein an effective gate width of said reset transistor is from 0.01 μm to 0.4 μm inclusive.

### Claim 5 (depends on 1)

The solid-state imaging device according to claim 1,
wherein an effective gate length of said reset transistor is from 0.1 μm to 1.0 μm inclusive.

### Claim 6 (depends on 1)

The solid-state imaging device according to claim 1,
wherein ions are distributed in a boundary between an active region which forms said photodiode and an element isolation region which separates the active region for isolating each element, the ions enhancing generation of carriers of an opposite polarity to majority carriers of said photodiode.

### Claim 7 (depends on 6)

The solid-state imaging device according to claim 6,
wherein the ions enhancing the generation of the carriers of the opposite polarity to the channel are distributed on the sidewall of the channel below the gate electrode of said reset transistor, seamlessly with the ions which are distributed in the boundary between the active region and the element isolation region.

### Claim 8 (depends on 1)

The solid-state imaging device according to claim 1,
wherein a plurality of said photodiodes share one detection capacitor and one reset transistor,
element isolation regions between said respective photodiodes, said detection capacitor and said reset transistor are connected seamlessly, and
the ions enhancing the generation of the carriers of the opposite polarity to the channel are distributed on sidewalls of the element isolation regions.

### Claim 9 (depends on 1)

The solid-state imaging device according to claim 1,
wherein a plurality of said photodiodes share one detection capacitor and a gate of one reset transistor,
element isolation regions between said respective photodiodes and said detection capacitor are connected seamlessly, while element isolation regions between said respective photodiodes and the gate of said reset transistor are not connected, and
the ions enhancing the generation of the carriers of the opposite polarity to the channel are distributed on all sidewalls of the element isolation regions.