Compound semiconductor device and process for producing the same
AssigneesSumitomo Chemical Company, Limited, Sumika Epi Solution Company, Ltd.
InventorsHisashi Yamada, Takenori Osada, Noboru Kukuhara
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Abstract
A compound semiconductor device comprising a hetero junction bipolar transistor including a compound semiconductor substrate, and a sub-collector layer, a collector layer, a base layer and an emitter layer formed in this order as thin crystalline layers on the compound semiconductor substrate by vapor phase deposition, wherein the base layer is a thin film of a p-type compound semiconductor doped with C and no peak of a type of bonding between H and C, C2-H, is detected in infrared absorption measurement at room temperature.
Claims15
A compound semiconductor device comprising a hetero junction bipolar transistor comprising a compound semiconductor substrate, and a sub-collector layer, a collector layer, a base layer and an emitter layer formed in this order as thin crystalline layers on said compound semiconductor substrate by vapor phase deposition,
- wherein said base layer is a thin film of a p-type compound semiconductor doped with C and no peak of a type of bonding between H and C, C2-H, is detected in infrared absorption measurement at room temperature.
A process for producing a compound semiconductor wafer comprising a hetero junction bipolar transistor structure comprising a compound semiconductor substrate, and a sub-collector layer, a collector layer, a base layer and an emitter layer formed in this order as thin crystalline layers on said compound semiconductor substrate, wherein said base layer is formed by vapor phase deposition of MOCVD by setting a V/III ratio in a range of 3.3 to 40, while supplying a halogenated methane.
A p-type compound semiconductor thin film obtainable by vapor phase deposition of MOCVD so as to contain at least one of Ga, Al and In, contain As as a group V element, and contain C as a dopant, characterized in that no peak of a type of bonding between H and C, C2-H, is detected in infrared absorption measurement at room temperature.
A process for verifying quality of a compound semiconductor wafer having a compound semiconductor layer doped with C on a compound semiconductor substrate, which comprises the steps of measuring a type of bonding between H and C, C2-H, in said wafer by infrared absorption to verify the quality thereof.
A process for verifying quality of a compound semiconductor wafer having a compound semiconductor layer doped with C on a compound semiconductor substrate, which comprises the steps of producing said wafer by vapor phase deposition, then measuring a type of bonding between H and C, C2-H, in said wafer by infrared absorption to verify the quality thereof.
Dependencies are inferred from the claim text.