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US 2006/0131603 A1Published application
Semiconductor laser diode
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorSoo-haeng Cho
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Abstract
A semiconductor laser diode is provided. The semiconductor laser diode includes a substrate; a lower clad layer on a substrate; an active layer on the lower clad layer; and an upper clad layer on the active layer and having a ridge that protrudes in a vertical direction. In the upper clad layer, impurity layers are formed by diffusing impurities at both sides of the ridge to suppress high-order traverse-mode lasing. The impurities are Ga-ions free vacancies or Zn ions.
Claims9
A semiconductor laser diode comprising:
- a substrate;
- a lower clad layer on a substrate;
- an active layer on the lower clad layer;
- and
- an upper clad layer on the active layer and having a ridge that protrudes in a vertical direction,
- wherein the upper clad layer includes impurity layers, which are formed by diffusing impurities at both sides of the ridge to suppress high-order traverse-mode lasing.
3 more elements
Dependencies are inferred from the claim text.