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US 2006/0131598 A1Published application
CMOS image sensor and method for fabricating the same
OwnerKwan Kohinventor
Life of this patent
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Abstract
A CMOS image sensor and a method for fabricating the same with improved light-receiving efficiency of the active device, e.g., a photodiode. The CMOS image sensor includes at least one photodiode positioned on a semiconductor substrate; and a microlens disposed above each photodiode, wherein the microlens is formed of a polymer exhibiting excellent transmissivity.
Claims17
A CMOS image sensor, comprising:
- at least one photodiode positioned on a semiconductor substrate;
- and
- a microlens disposed above each of said at least one photodiode,
- wherein said microlens is formed of a polymer material.
1 more element
A method for fabricating a CMOS image sensor, comprising:
- forming an insulating interlayer on a semiconductor substrate on which at least one photodiode is positioned;
- forming a polymer pattern over and in correspondence with the position of the at least one photodiode by first forming a polymer material layer and then patterning the polymer material layer;
- and
- reflowing the polymer material of the polymer pattern to form a microlens for directing incident light onto the at least one photodiode.
1 more element
The CMOS image sensor, comprising:
- a plurality of photodiodes positioned at fixed intervals on a semiconductor substrate;
- an insulating interlayer formed over said plurality of photodiodes on a surface of the semiconductor substrate;
- a color filter layer, formed on said insulating interlayer, having a plurality of color filters corresponding to said plurality of photodiodes;
- and
- a plurality of microlenses of polymer material disposed in correspondence with the color filters of said color filter layer.
2 more elements
Dependencies are inferred from the claim text.