Light-emitting diode and method for manufacturing the same
AssigneeSouth Epitaxy Corporation
InventorsMing-Lum Lee, Shih-Chang Shei
Life of this patent
Estimating the term…
Abstract
A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode has a metal substrate, a first transparent conductive layer, a first contact layer, and an illuminating epitaxial structure stacked in sequence. An ohmic contact layer is located on a portion of the illuminating epitaxial structure. A thickness of the metal substrate is greater than 40 μm. The first contact layer is a doped strained-layer-superlattices (SLS) structure. Additionally, the light-emitting diode can further be a reflective layer located between the metal substrate and the first transparent conductive layer.
Claims27
A light-emitting diode (LED), comprising:
- a metal substrate;
- a first transparent conductive layer, located on the metal substrate;
- a first contact layer, located on the first transparent conductive layer;
- an illuminating epitaxial structure, located on the first contact layer;
- and
- an ohmic contact layer, located on the illuminating epitaxial structure.
A light-emitting diode, comprising:
- a metal substrate;
- an illuminating epitaxial structure, located on the metal substrate;
- a first contact layer, located on the illuminating epitaxial structure;
- a first transparent conductive layer, located on the first contact layer;
- and
- an ohmic contact layer, located on the first transparent conductive layer.
A method for manufacturing a light-emitting diode, comprising:
- providing an epitaxial substrate;
- forming an illuminating epitaxial structure on the epitaxial substrate;
- forming a first contact layer on the illuminating epitaxial structure;
- forming a first transparent conductive layer on the first contact layer;
- forming a metal substrate on the first transparent conductive layer;
- removing the epitaxial substrate to expose a surface of the illuminating epitaxial structure;
- and
- forming an ohmic contact layer on part of the illuminating epitaxial structure.
A method for manufacturing a light-emitting diode, comprising:
- providing an epitaxial substrate;
- forming a first contact layer on the epitaxial substrate;
- forming an illuminating epitaxial structure on the first contact layer;
- forming a metal substrate on the illuminating epitaxial structure;
- removing the epitaxial substrate to expose a surface of the first contact layer;
- forming a first transparent conductive layer on the first contact layer;
- and
- forming an ohmic contact layer on part of the first transparent conductive layer.
Dependencies are inferred from the claim text.