Semiconductor laser, manufacturing the same and semiconductor laser device

A semiconductor laser element manufacturing method comprising:

• a step of forming an active layer over a semiconductor substrate,
• a step of forming a ridge having a clad layer formed on the active layer and a contact layer formed over the clad layer,
• a step of forming an insulation film covering the side surfaces of the clad layer and having an end portion in the ridge thickness direction located between the upper surface and the lower surface of the contact layer, and
• a step of forming a electrode over the insulation film so as to be connected to the contact layer.

A semiconductor laser element comprising:

• a plurality of semiconductor layers formed over a semiconductor substrate,
• a ridge having a first semiconductor layer formed on the plurality of semiconductor layers and a contact layer formed over the first semiconductor layer,
• an insulation film covering the side surfaces of the ridge in a first direction, and
• an electrode connected to the contact layer,
• wherein the upper surface of the contact layer has a width in the first direction greater than a width of the lower surface of the contact layer in the first direction.

A semiconductor laser element comprising:

• a plurality of semiconductor layers formed over a semiconductor substrate,
• a ridge having a first semiconductor layer formed on the plurality of semiconductor layers and a contact layer formed over the first semiconductor layer,
• an insulation film covering the side surfaces of the ridge in a first direction, and
• an electrode connected to the contact layer,
• wherein the upper surface of the contact layer has a width in the first direction greater than a width of the lower surface of the contact layer in the first direction and greater than a width of the first semiconductor layer in the first direction.